GROWTH TEMPERATURE-DEPENDENCE OF THE SI(001)/SIO2 INTERFACE WIDTH

被引：28
作者：
TANG, MT
EVANSLUTTERODT, KW
GREEN, ML
BRASEN, D
KRISCH, K
MANCHANDA, L
HIGASHI, GS
BOONE, T
机构：
[1] AT and T Bell Laboratories, Murray Hill
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 06期
关键词：
D O I：
10.1063/1.111054
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The growth temperature dependence of the thin thermally oxidized Si(001)/SiO2 interface width was studied using synchrotron x-ray diffraction. Nine samples with oxide thickness of about 100 Angstrom were studied, with growth temperatures ranging from 800 to 1200 degrees C. The oxides were prepared by rapid thermal oxidation. We found that interfacial roughness decreases linearly with increasing growth temperature, with a measured interface width of 2.84 Angstrom for the sample grown at 800 degrees C, and 1.76 Angstrom when grown at 1200 degrees C.
引用
收藏
页码：748 / 750
页数：3
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