MOLECULAR-BEAM GROWTH OF GALLIUM-PHOSPHIDE

被引：1

作者：

SUDLOW, PD ^{[1
]}

SAUNDERS, IJ ^{[1
]}

机构：

[1] UNIV LANCASTER,DEPT PHYS,LANCASTER,ENGLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 16卷 / 02期

关键词：

D O I：

10.1002/pssa.2210160253

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K147 / K151

页数：5

共 10 条

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[4]

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[7] SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES [J].

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[8]

MARAIS M, 1964, ONDE ELECTRIQUE, V44, P1005

[9] THE INFLUENCE OF A TRANSVERSE MAGNETIC FIELD ON THE CONDUCTIVITY OF THIN METALLIC FILMS [J].

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[10] REVIEW OF ELECTRICAL AND OPTICAL PROPERTIES OF III-V COMPOUND SEMICONDUCTOR FILMS [J].

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