STOICHIOMETRY EFFECTS ON SURFACE-PROPERTIES OF GAAS(100) GROWN INSITU BY MBE

被引:143
作者
MASSIES, J
ETIENNE, P
DEZALY, F
LINH, NT
机构
关键词
D O I
10.1016/0039-6028(80)90582-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:121 / 131
页数:11
相关论文
共 28 条
[1]   SCHOTTKY BARRIERS ON ORDERED AND DISORDERED SURFACES OF GAAS(110) [J].
AMITH, A ;
MARK, P .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1344-1352
[2]   SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J].
ARTHUR, JR .
SURFACE SCIENCE, 1974, 43 (02) :449-461
[3]  
CHANG LL, 1975, EPITAXIAL GROWTH A, P37
[4]  
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[5]   RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J].
CHO, AY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :275-284
[6]   SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS [J].
CHO, AY ;
DERNIER, PD .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3328-3332
[8]   COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES [J].
DRATHEN, P ;
RANKE, W ;
JACOBI, K .
SURFACE SCIENCE, 1978, 77 (01) :L162-L166
[9]   MOLECULAR-BEAM SYSTEM CONTROLLED BY QUADRUPOLE MASS-SPECTROMETER [J].
ETIENNE, P ;
MASSIES, J ;
LINH, NT .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1977, 10 (11) :1153-1155
[10]   APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J].
FARNSWORTH, HE ;
SCHLIER, RE ;
GEORGE, TH ;
BURGER, RM .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) :1150-1161