Changes in electrophysical properties of heavily doped n-Ge < As > single crystals under the influence of thermoannealings

被引：0
作者：
Gaidar, G. P. [1 ]
机构：
[1] Natl Acad Sci Ukraine, Inst Nucl Res, 47 Prospect Nauky, UA-03680 Kiev, Ukraine
来源：
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2015年 / 18卷 / 01期
关键词：
germanium; thermoannealing; Hall effect; charge carrier concentration; charge carrier mobility;
D O I：
10.15407/spqeo18.01.053
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Features of changes in the electrophysical parameters (concentrations of charge carriers n(e) and their mobilities mu ) in heavily doped n-Ge < As > single crystals, which occur as a result of the series of thermoannealings (each for 0.5 h) over a wide temperature range (540 <= T <= 900 degrees C), have been investigated and explained.
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页码：53 / 56
页数：4
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