SINGLE-CRYSTAL GERMANIUM

被引:20
作者
TEAL, GK
SPARKS, M
BUEHLER, E
机构
来源
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1952年 / 40卷 / 08期
关键词
D O I
10.1109/JRPROC.1952.274096
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:906 / 909
页数:4
相关论文
共 13 条
[1]   PHYSICAL PRINCIPLES INVOLVED IN TRANSISTOR ACTION [J].
BARDEEN, J ;
BRATTAIN, WH .
PHYSICAL REVIEW, 1949, 75 (08) :1208-1225
[2]   THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM [J].
HAYNES, JR ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1951, 81 (05) :835-843
[3]   OBSERVATIONS OF ZENER CURRENT IN GERMANIUM P-N JUNCTIONS [J].
MCAFEE, KB ;
RYDER, EJ ;
SHOCKLEY, W ;
SPARKS, M .
PHYSICAL REVIEW, 1951, 83 (03) :650-651
[4]   PRESENT STATUS OF TRANSISTOR DEVELOPMENT [J].
MORTON, JA .
BELL SYSTEM TECHNICAL JOURNAL, 1952, 31 (03) :411-442
[5]   CORRELATION OF GEIGER COUNTER AND HALL EFFECT MEASUREMENTS IN ALLOYS CONTAINING GERMANIUM AND RADIOACTIVE ANTIMONY-124 [J].
PEARSON, GL ;
STRUTHERS, JD ;
THEUERER, HC .
PHYSICAL REVIEW, 1950, 77 (06) :809-813
[6]   P-N JUNCTION RECTIFIER AND PHOTO-CELL [J].
PIETENPOL, WJ .
PHYSICAL REVIEW, 1951, 82 (01) :120-121
[7]   P-N JUNCTION TRANSISTORS [J].
SHOCKLEY, W ;
SPARKS, M ;
TEAL, GK .
PHYSICAL REVIEW, 1951, 83 (01) :151-162
[8]   THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].
SHOCKLEY, W .
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489
[9]  
Shockley W., 1952, PHYS TODAY, V5, P18, DOI DOI 10.1063/1.3067420
[10]  
VALDES LB, UNPUB BELL SYS TECH