DEPENDENCE OF IONIZATION COEFFICIENTS ON WELL AND BARRIER WIDTHS FOR GAAS/A LGAAS MULTIPLE QUANTUM-WELLS

被引：11

作者：

FRANKS, RB

机构：

[1] Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, Mappin Street

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 10期

关键词：

D O I：

10.1016/0038-1101(90)90026-B

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact ionization coefficients in GaAs/Al0.3Ga07As multiple quantum well structures, having well and barrier thicknesses in the range 30-500 Å, have been experimentally determined. For MQW structures having equal well and barrier thicknesses, both the electron ionization coefficient α, and the hole ionization coefficient β reduce with decreasing well dimension. There is no appreciable change in the ratio α/β over the range of dimensions and electric fields studied. © 1990.

引用

页码：1235 / 1245

页数：11

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