INDENTATION FRACTURE-TOUGHNESS OF SINTERED SILICON-CARBIDE IN THE PALMQVIST CRACK REGIME

被引：194

作者：

LI, Z ^{[1
]}

GHOSH, A ^{[1
]}

KOBAYASHI, AS ^{[1
]}

BRADT, RC ^{[1
]}

机构：

[1] UNIV WASHINGTON,COLL ENGN,SEATTLE,WA 98195

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1989年 / 72卷 / 06期

关键词：

D O I：

10.1111/j.1151-2916.1989.tb06242.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：904 / 911

页数：8

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