SURFACE-RESISTANCE MEASUREMENT AS AN AID IN CONTROLLING FABRICATION OF SILICIDES

被引:3
作者
MGBENU, E [1 ]
PETERSSON, S [1 ]
TOVE, PA [1 ]
机构
[1] UNIV UPPSALA,INST TECHNOL,UPPSALA,SWEDEN
关键词
D O I
10.1016/0042-207X(77)90058-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:209 / 211
页数:3
相关论文
共 9 条
[1]   TEMPERATURE COEFFICIENTS OF RESISTANCE OF METALLIC FILMS IN THE TEMPERATURE RANGE 25-DEGREES-C TO 600-DEGREES-C [J].
BELSER, RB ;
HICKLIN, WH .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (03) :313-322
[2]   GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J].
BOWER, RW ;
MAYER, JW .
APPLIED PHYSICS LETTERS, 1972, 20 (09) :359-&
[3]   STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J].
BUCKLEY, WD ;
MOSS, SC .
SOLID-STATE ELECTRONICS, 1972, 15 (12) :1331-&
[4]   IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION [J].
CHU, WK ;
LAU, SS ;
MAYER, JW ;
MULLER, H .
THIN SOLID FILMS, 1975, 25 (02) :393-402
[5]  
COE DJ, 1974, METAL SEMICONDUCTOR
[6]   ANALYSIS OF THIN-FILM STRUCTURES WITH NUCLEAR BACKSCATTERING AND X-RAY-DIFFRACTION [J].
MAYER, JW ;
TU, KN .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01) :86-93
[7]  
PETERSSON S, 1976, PHYS STAT SOL A, V36
[8]   STUDIES OF FORMATION OF SILICIDES AND THEIR BARRIER HEIGHTS TO SILICON [J].
SUNDSTROM, KE ;
PETERSSON, S ;
TOVE, PA .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (02) :653-668
[9]   RESISTIVITY MEASUREMENTS ON GERMANIUM FOR TRANSISTORS [J].
VALDES, LB .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (02) :420-427