3-GHZ 15-W SILICON BIPOLAR-TRANSISTORS

被引：1

作者：

UCHIZAKI, I

HORI, S

ODA, Y

TOMITA, N

机构：

[1] Microwave Electronics Development Department, Electronics Equipment Division, Toshiba, Kawasaki

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1979年 / 27卷 / 12期

关键词：

D O I：

10.1109/TMTT.1979.1129788

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon bipolar transistors delivering 15-W CW output power with 4.8-dB gain and 38-percent collector efficiency have been developed at 3 GHz. The transistors have been fabricated by boron ion implantation for base region and arsenic diffusion from doped polysilicon for emitter region. Chemical dry-etching techniques for fine patterning and internal- matching techniques have been applied. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1038 / 1042

页数：5