ENERGY SPECTRUM OF DEEP CENTERS IN HIGH-RESISTIVITY GALLIUM PHOSPHIDE

被引：0

作者：

GLORIOZOVA, RI

IGLITSYN, MI

KOLESNIK, LI

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1969年 / 3卷 / 06期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：790 / +

页数：1

共 50 条

[31] ENERGY SPECTRUM OF HIGH-RESISTIVITY GAAS WITH AN N-TYPE CURRENT-VOLTAGE CHARACTERISTIC
VOROBEV, YV
KARKHANI.YI
TRETYAK, OV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (12): : 1531 - &
[32] THE RAMAN SPECTRUM OF GALLIUM PHOSPHIDE
HOBDEN, MV
RUSSELL, JP
PHYSICS LETTERS, 1964, 13 (01): : 39 - 41
[33] RAMAN SPECTRUM OF GALLIUM PHOSPHIDE
KRISHNAN, RS
KRISHNAM.N
JOURNAL DE PHYSIQUE, 1965, 26 (11): : 630 - &
[34] OBSERVATION OF IMPURITY STATES IN HIGH-RESISTIVITY GALLIUM-ARSENIDE BY THE PHOTOREFLECTION METHOD
PIKHTIN, AN
AIRAKSINEN, VM
LIPSANEN, H
TUOMI, T
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (07): : 797 - 798
[35] ON SOME PECULIARITIES OF THE OXYGEN CHARGE STATES IN HIGH-RESISTIVITY GALLIUM-ARSENIDE
MOROZOVA, VA
OSTROBORODOVA, VV
VESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 3 FIZIKA ASTRONOMIYA, 1986, 27 (06): : 88 - 90
[36] PROPERTIES OF A HIGH-RESISTIVITY LAYER IN EPITAXIALLY GROWN GALLIUM-ARSENIDE FILM
OKAMOTO, H
SAKATA, S
APPLIED PHYSICS LETTERS, 1973, 22 (09) : 446 - 447
[37] PROFILES OF ABSORPTION AND LUMINESCENCE SPECTRA OF DEEP CENTERS IN SEMICONDUCTORS (OXYGEN IN GALLIUM PHOSPHIDE).
Kopylov, A.A.
Pikhtin, A.N.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 8 (12): : 1563 - 1566
[38] INVESTIGATION OF DEEP IMPURITIES IN SCHOTTKY DIODES ON HIGH-RESISTIVITY SILICON
DABROWSKI, W
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 105 (02): : 511 - 520
[39] PARAMETERS OF PHOTOSENSITIVITY CENTERS IN HIGH-RESISTIVITY CRYSTALS OF P-TYPE CDTE
LYUBCHENKO, AV
POTYKEVI.IV
BOREIKO, LA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1463 - +
[40] CONTROLLING INFLUENCE OF ELECTROPHOTOGRAPHIC POTENTIAL ON PHOTOCURRENT SPECTRUM OF A HIGH-RESISTIVITY SEMICONDUCTOR
BOGOSLOVSKII, VI
IZVOZCHIKOV, VA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (07): : 910 - 911

← 1 2 3 4 5 →