共 50 条
- [21] CURRENT OSCILLATIONS IN HIGH-RESISTIVITY SILICON WITH DEEP LEVELS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 13 (02): : 613 - &
- [22] SEMICONDUCTOR PHOTOGRAPHIC SYSTEM BASED ON HIGH-RESISTIVITY GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (09): : 1585 - 1587
- [23] DEEP LEVELS IN HIGH-RESISTIVITY MATERIALS - SI AND CDS REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (11): : 565 - 569
- [25] CARRIER LIFETIMES IN HIGH-RESISTIVITY IRON-DOPED GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (01): : 169 - +
- [26] SOME PROPERTIES OF TITANIUM-DOPED HIGH-RESISTIVITY GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (05): : 853 - &
- [27] INJECTION BREAKDOWN IN HIGH-RESISTIVITY GALLIUM ARSENIDE DOPED WITH IRON AND CHROMIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1440 - +
- [29] ENERGY SPECTRUM OF CENTERS IN UNDOPED GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (01): : 139 - &
- [30] NATURE OF DEEP CENTERS FORMED AS A RESULT OF HIGH-TEMPERATURE TREATMENT OF HIGH-RESISTIVITY DISLOCATION-FREE SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (02): : 233 - 234