GROWTH OF ZINC-DOPED GALLIUM PHOSPHIDE BY WATER VAPOR TRANSPORT METHOD

被引：6

作者：

LUTHER, LC

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 03期

关键词：

D O I：

10.1149/1.2411850

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：374 / &

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共 12 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &
[2] CASEY HW, UNPUBLISHED
[3] OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE
DEAN, PJ
FROSCH, CJ
HENRY, CH
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5631 - &
[4] THE EPITAXIAL GROWTH OF GAP BY A GA2O VAPOR TRANSPORT MECHANISM
FROSCH, CJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (02) : 180 - 184
[5] FROSCH CJ, 1967, T METALL SOC AIME, V239, P365
[6] NEW RED PAIR LUMINESCENCE FROM GAP
HENRY, CH
DEAN, PJ
CUTHBERT, JD
[J]. PHYSICAL REVIEW, 1968, 166 (03): : 754 - &
[7] DETERMINATION OF TRACE ELEMENTS IN INORGANIC AND ORGANIC MATERIALS BY X-RAY FLUORESCENCE SPECTROSCOPY
LUKE, CL
[J]. ANALYTICA CHIMICA ACTA, 1968, 41 (02) : 237 - &
[8] EPITAXIAL GROWTH OF ZINC- AND CADMIUM-DOPED GALLIUM PHOSPHIDE BY GALLIUM CHLORIDE VAPOR TRANSPORT
LUTHER, LC
ROCCASECCA, DD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) : 850 - +
[9] ETCH PITS IN GALLIUM ARSENIDE
RICHARDS, JL
CROCKER, AJ
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (03) : 611 - 612
[10] ROSZTOCZY FE, 1968, J ELECTROCHEM SOC, V115, pC244