GROWTH OF ZINC-DOPED GALLIUM PHOSPHIDE BY WATER VAPOR TRANSPORT METHOD

被引：6

作者：

LUTHER, LC

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 03期

关键词：

D O I：

10.1149/1.2411850

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：374 / &

共 12 条

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[8] EPITAXIAL GROWTH OF ZINC- AND CADMIUM-DOPED GALLIUM PHOSPHIDE BY GALLIUM CHLORIDE VAPOR TRANSPORT [J].

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ROCCASECCA, DD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) :850-+

[9] ETCH PITS IN GALLIUM ARSENIDE [J].

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