DENSITY OF STATES IN HYDROGENATED AMORPHOUS-SILICON

[1] DIRECT MEASUREMENT OF THE BULK-DENSITY OF GAP STATES IN N-TYPE HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (03) : 197 - 200

[2] DETERMINATION OF MIDGAP DENSITY OF STATES IN A-SI-H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 451 - 454

[3] SINGLE AND DOUBLE CARRIER INJECTION IN A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 363 - 368

[4] DENSITY-OF-STATES DISTRIBUTION IN THE MOBILITY GAP OF A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 273 - 280

[5] EFFECTS OF DEEP LOCALIZED-STATE DISTRIBUTION ON PHOTOCONDUCTIVE PROPERTIES IN AMORPHOUS-SILICON [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 385 - 388

[6] ESTIMATION OF LOCALIZED STATE DISTRIBUTION PROFILES IN UNDOPED AND DOPED A-SI-H BY MEASURING SPACE-CHARGE-LIMITED CURRENT [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (06) : 927 - 930

[7] GOLIKOVA OA, 1983, SOV PHYS SEMICOND+, V17, P793

[8] Lampert M.A., 1970, CURRENT INJECTION SO

[9] LEIDERMAN AY, 1985, PHYS STATUS SOLIDI A, V87, P363, DOI 10.1002/pssa.2210870139

[10] DENSITY OF STATES IN AMORPHOUS-SILICON DETERMINED FROM TRANSPORT EXPERIMENTS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 375 - 380

[1] DIRECT MEASUREMENT OF THE BULK-DENSITY OF GAP STATES IN N-TYPE HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (03) : 197 - 200

[2] DETERMINATION OF MIDGAP DENSITY OF STATES IN A-SI-H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 451 - 454

[3] SINGLE AND DOUBLE CARRIER INJECTION IN A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 363 - 368

[4] DENSITY-OF-STATES DISTRIBUTION IN THE MOBILITY GAP OF A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 273 - 280

[5] EFFECTS OF DEEP LOCALIZED-STATE DISTRIBUTION ON PHOTOCONDUCTIVE PROPERTIES IN AMORPHOUS-SILICON [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 385 - 388

[6] ESTIMATION OF LOCALIZED STATE DISTRIBUTION PROFILES IN UNDOPED AND DOPED A-SI-H BY MEASURING SPACE-CHARGE-LIMITED CURRENT [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (06) : 927 - 930

[7] GOLIKOVA OA, 1983, SOV PHYS SEMICOND+, V17, P793

[8] Lampert M.A., 1970, CURRENT INJECTION SO

[9] LEIDERMAN AY, 1985, PHYS STATUS SOLIDI A, V87, P363, DOI 10.1002/pssa.2210870139

[10] DENSITY OF STATES IN AMORPHOUS-SILICON DETERMINED FROM TRANSPORT EXPERIMENTS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 375 - 380