ANNEALING EFFECTS ON SI-DOPED GAAS GROWN ON HIGH-INDEX PLANES BY MOLECULAR-BEAM EPITAXY

被引：22

作者：

HARRISON, I

PAVESI, L

HENINI, M

JOHNSTON, D

机构：

[1] UNIV TRENT,DIPARTIMENTO FIS,I-38050 TRENT,ITALY

[2] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 06期

关键词：

D O I：

10.1063/1.356994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A photoluminescence study of the effects of annealing on Si-doped (approximately 10(16) cm-3) GaAs grown on (311)A-, (111)A-, (111)B-, and (100)-oriented substrates by molecular-beam epitaxy has been performed. The anneal temperatures were 873, 973, and 1098 K. All the anneals were of 24 h duration. Detailed assessment of the low-temperature photoluminescence spectra suggests that site switching (Si switching from Ga site to As site) only occurs in the n-type samples [(100) and (111) B samples] and not in the p-type ones [(111)A and (311)A samples].

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页码：3151 / 3157

页数：7

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