DYNAMIC CHARACTERISTICS OF BATIO3 CERAMIC SEMICONDUCTORS WITH A MULTILAYER STRUCTURE

Transient changes of temperature and current were numerically analyzed in BaTiO3 semiconductors with a multilayer structure to which a constant electric field was applied. The numerical analysis required the radiation coefficient of the multilayer sample and the temperature dependence of resistivity of the material as input data. Temperature distribution of the sample was modeled to be uniform since the material possesses positive temperature coefficients of resistivity in the temperature range above the Curie point. The results of the numerical analysis agreed qualitatively with experimental results in the transient response, although the numerical analysis yielded some disagreements with experimental results when the applied electric field was low. The disagreements between analytical and experimental results are discussed with a focus on temperature distribution in samples.