PHOTOELECTRON EFFECTS ON THE DOSE DEPOSITED IN MOS DEVICES BY LOW-ENERGY X-RAY SOURCES

被引：26

作者：

BROWN, DB

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1980年 / 27卷 / 06期

关键词：

D O I：

10.1109/TNS.1980.4331052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1465 / 1468

页数：4

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