PHOTOELECTRON EFFECTS ON THE DOSE DEPOSITED IN MOS DEVICES BY LOW-ENERGY X-RAY SOURCES

被引：26
作者：
BROWN, DB
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1980年 / 27卷 / 06期
关键词：
D O I：
10.1109/TNS.1980.4331052
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1465 / 1468
页数：4
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