EXCESS NOISE IN NARROW GERMANIUM P-N JUNCTIONS

被引:52
作者
YAJIMA, T
ESAKI, L
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D O I
10.1143/JPSJ.13.1281
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:1281 / 1287
页数:7
相关论文
共 14 条
[1]   TEMPERATURE DEPENDENCE OF FLICKER NOISE OF P-N-P JUNCTION TRANSISTORS [J].
AMAKASU, K ;
ASANO, M .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) :1249-1249
[2]   INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1957, 106 (03) :418-426
[3]  
ENGLUND JW, TRANSISTORS, V1, P309
[4]   NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J].
ESAKI, L .
PHYSICAL REVIEW, 1958, 109 (02) :603-604
[5]  
ESAKI L, 1958, JUN INT C SOL STAT P
[6]  
FONGER WH, TRANSISTORS, V1, P239
[7]   MEASUREMENT OF NOISE SPECTRA OF A GERMANIUM P-N JUNCTION DIODE [J].
HYDE, FJ .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (02) :231-241
[8]  
KOMATSUBARA K, 1957, J APPL PHYS JAPAN, V26, P72
[9]  
MCWHORTER AL, 1956, SEMICONDUCTOR SURFAC, P207
[10]   ELECTRICAL NOISE IN SEMICONDUCTORS [J].
MONTGOMERY, HC .
BELL SYSTEM TECHNICAL JOURNAL, 1952, 31 (05) :950-975