MICROWAVE HALL EFFECT IN GERMANIUM AND SILICON AT 20 KMC-S

被引：22

作者：

HAMBLETON, GE

GARTNER, WW

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(59)90353-1

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：329 / 332

页数：4

共 10 条

[1]

BARLOW HEM, 1954, P I ELECT ENGRS B, V102, P179

[2]

BARLOW HEM, 1956, P IEE LONDON, V103, P110

[3]

COOKE SP, 1948, PHYS REV, V74, pL701

[4] HIGH FREQUENCY CONDUCTIVITY IN SEMICONDUCTORS [J].

DONOVAN, B ;

MARCH, NH .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (05) :528-538

[5] THE HALL EFFECT IN METALS AT HIGH FREQUENCIES [J].

DONOVAN, B .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1955, 68 (11) :1026-1032

[6] THE MAGNETO-RESISTANCE EFFECT IN METALS AT HIGH FREQUENCIES [J].

DONOVAN, B .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1954, 67 (412) :305-314

[7]

FUKUROI T, 1957, SCI REP RITU A, V9, P190

[8]

HAMBLETON GE, 1958, B AM PHYS SOC 2, V3, P259

NISHINA, Y ;

SPRY, WJ .

[10] FARADAY EFFECT IN GERMANIUM AT ROOM TEMPERATURE [J].

RAU, RR ;

CASPARI, ME .

PHYSICAL REVIEW, 1955, 100 (02) :632-639