ELECTRONIC SURFACE-STATES ON CLEAVED GAP(110) - INITIAL STEPS OF THE OXYGEN-CHEMISORPTION

被引:25
作者
GUICHAR, GM
SEBENNE, CA
THUAULT, CD
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期
关键词
D O I
10.1116/1.570193
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:1212 / 1215
页数:4
相关论文
共 13 条
[1]   SURFACE BANDS IN RELAXED CLEAVAGE SURFACE OF GAP [J].
BERTONI, CM ;
BISI, O ;
MANGHI, F ;
CALANDRA, C .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1256-1261
[2]   INTRINSIC SURFACE STATES IN 3-5 COMPOUNDS [J].
CALANDRA, C ;
SANTORO, G .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (02) :L51-L54
[3]   ELECTRONIC SURFACE PROPERTIES OF 3-5 SEMICONDUCTORS - EXCITONIC EFFECTS, BAND-BENDING EFFECTS, AND INTERACTIONS WITH AU AND O ADSORBATE LAYERS [J].
GUDAT, W ;
EASTMAN, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :831-837
[4]  
GUICHAR G, 1976, 13 P INT C PHYS SEM, P710
[5]   STRUCTURE DEPENDENT OXIDATION OF CLEAN SI(111) SURFACES [J].
GUICHAR, GM ;
SEBENNE, CA ;
GARRY, GA ;
BALKANSKI, M .
SURFACE SCIENCE, 1976, 58 (02) :374-378
[6]   INTRINSIC AND DEFECT-INDUCED SURFACE-STATES OF CLEAVED GAAS(110) [J].
GUICHAR, GM ;
SEBENNE, CA ;
GARRY, GA .
PHYSICAL REVIEW LETTERS, 1976, 37 (17) :1158-1161
[7]  
GUICHAR GM, 1978, THESIS U PIERRE MARI
[8]   ELECTRONIC SURFACE PROPERTIES OF UHV-CLEAVED 3-5 COMPOUNDS [J].
HUIJSER, A ;
VANLAAR, J ;
VANROOY, TL .
SURFACE SCIENCE, 1977, 62 (02) :472-486
[9]   ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1. [J].
IBACH, H ;
HORN, K ;
DORN, R ;
LUTH, H .
SURFACE SCIENCE, 1973, 38 (02) :433-454
[10]   SURFACE-STATES ON GALLIUM-PHOSPHIDE [J].
NORMAN, D ;
MCGOVERN, IT ;
NORRIS, C .
PHYSICS LETTERS A, 1977, 63 (03) :384-386