CYCLOTRON-RESONANCE MEASUREMENTS OF THE HIGH ELECTRON-MOBILITY TRANSISTOR

被引:0
作者
CHANG, CS [1 ]
FETTERMAN, HR [1 ]
GREEN, A [1 ]
机构
[1] USN,CTR WEAP,SEMICOND & SURFACE SCI BRANCH,CHINA LAKE,CA 93555
关键词
D O I
10.1063/1.103184
中图分类号
O59 [应用物理学];
学科分类号
摘要
The photoconductivity cyclotron resonance measurement is used to determine the effective masses of the high electron mobility transistor. The experimental data show that the effective mass is a function of the gate voltage.
引用
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页码:57 / 59
页数:3
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