ELECTRONIC CONDUCTION IN DIELECTRIC FILMS

被引:33
作者
JONSCHER, AK
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D O I
10.1149/1.2412037
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:C217 / &
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[1]   DIELECTRIC PROPERTIES OF THIN FILMS OF ALUMINIUM OXIDE AND SILICON OXIDE [J].
ARGALL, F ;
JONSCHER, AK .
THIN SOLID FILMS, 1968, 2 (03) :185-&
[2]   SWITCHING PHENOMENA IN TITANIUM OXIDE THIN FILMS [J].
ARGALL, F .
SOLID-STATE ELECTRONICS, 1968, 11 (05) :535-&
[3]  
Argall F, 1966, ELECTRON LETT, V2, P282, DOI 10.1049/el:19660238
[4]  
CHAN WS, 1969, PHYS STAT SOL, V32
[5]   AVALANCHE-INDUCED NEGATIVE RESISTANCE IN THIN OXIDE FILMS [J].
CHOPRA, KL .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) :184-&
[6]   PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS [J].
CHU, TL ;
LEE, CH ;
GRUBER, GA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :717-&
[7]   ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON [J].
DEAL, BE ;
FLEMING, PJ ;
CASTRO, PL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :300-&
[8]   ELECTRONIC CONDUCTION THEORUGH THIN UNSATURATED OXIDE LAYERS [J].
DEARNALEY, G .
PHYSICS LETTERS A, 1967, A 25 (10) :760-+
[9]  
DEWALD JF, 1962, J ELECTROCHEM SOC, V109, P2438
[10]   PROPERTY CHANGES IN PYROLYTIC SILICON NITRIDE WITH REACTANT COMPOSITION CHANGES [J].
DOO, VY ;
KERR, DR ;
NICHOLS, DR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) :61-&