DETERMINATION OF FLAT-BAND POTENTIAL OF A SEMICONDUCTOR IN CONTACT WITH A METAL OR AN ELECTROLYTE FROM MOTT-SCHOTTKY PLOT

被引：363

作者：

CARDON, F ^{[1
]}

GOMES, WP ^{[1
]}

机构：

[1] STATE UNIV GHENT,FYS SCHEIKUNDE LAB,B-9000 GHENT,BELGIUM

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1978年 / 11卷 / 04期

关键词：

D O I：

10.1088/0022-3727/11/4/003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L63 / L67

页数：5

共 17 条

[1]

BIRINTSEVA TP, 1965, IAN SSSR KH, P251

[2] INTERPRETATION OF MOTT-SCHOTTKY PLOTS DETERMINED AT SEMICONDUCTOR-ELECTROLYTE SYSTEMS [J].

DEGRYSE, R ;

GOMES, WP ;

CARDON, F ;

VENNIK, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) :711-712

[3] ELECTROCHEMICAL PROPERTIES OF SEMICONDUCTING TIO2 (RUTILE) SINGLE-CRYSTAL ELECTRODE [J].

DUTOIT, EC ;

CARDON, F ;

GOMES, WP .

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1976, 80 (06) :475-481

[4] INVESTIGATION ON FREQUENCY-DEPENDENCE OF IMPEDANCE OF NEARLY IDEALLY POLARIZABLE SEMICONDUCTOR ELECTRODES CDSE, CDS AND TIO2 [J].

DUTOIT, EC ;

VANMEIRHAEGHE, RL ;

CARDON, F ;

GOMES, WP .

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1975, 79 (12) :1206-1213

[5]

GOMES WP, 1970, BERICH BUNSEN GESELL, V74, P431

[6]

GOMES WP, 1973, Z PHYS CHEM NEUE FOL, V86, P330

[7] FREQUENCY-DEPENDENCE OF IMPEDANCE OF N-TYPE AND P-TYPE GALLIUM-ARSENIDE ELECTRODES [J].

LAFLERE, WH ;

VANMEIRHAEGHE, RL ;

CARDON, F ;

GOMES, WP .

SURFACE SCIENCE, 1976, 59 (02) :401-412

[8] DIFFERENTIAL CAPACITANCE OF N-TYPE AND P-TYPE GALLIUM-ARSENIDE ELECTRODE [J].

LAFLERE, WH ;

CARDON, F ;

GOMES, WP .

SURFACE SCIENCE, 1974, 44 (02) :541-552

[9]

LAFLERE WH, SURFACE SCI

[10]

LOHMANN F, 1966, BERICH BUNSEN GESELL, V70, P428

← 1 2 →