PROPERTIES OF CHEMICAL VAPOR-DEPOSITED TUNGSTEN SILICIDE FILMS USING REACTION OF WF6 AND SI2H6

Tungsten silicide films were formed by the chemical vapor deposition method using the reaction WF//6 and Si//2H//6. The deposition rate, resistivity, composition, stress, crystal structure, and content of impurities were studied and compared with tungsten silicide films deposited by reaction of WF//6 and SiH//4. The tungsten silicide films made using Si//2H//6 have a higher deposition rate and higher Si concentration than those made by using SiH//4 at the same substrate temperature. For these reasons, the tungsten silicide films made by using Si//2H//6 were found to have a resistivity that is a little higher and, after annealing, a stress that is smaller than that made by SiH//4. Also, the resistance of tungsten silicide to peeling is larger than that of the film made by using SiH//4.