USE OF ULTRA-LOW-ENERGY BF-2+ IMPLANTATION AND RAPID ANNEALING TO AVOID CHANNELING EFFECTS IN SHALLOW JUNCTION FORMATION

被引：7

作者：

FELCH, SB

POWELL, RA

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 21卷 / 2-4期

关键词：

D O I：

10.1016/0168-583X(87)90885-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

收藏

页码：486 / 489

页数：4

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[1] CHANNELING EFFECT FOR LOW-ENERGY ION-IMPLANTATION IN SI
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[2] 1-2-KEV BORON IMPLANTS INTO SILICON
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[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (08) : 397 - 399
[3] LOW-ENERGY RANGE DISTRIBUTIONS OF B-10 AND B-11 IN AMORPHOUS AND CRYSTALLINE SILICON
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[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 194 (1-3): : 113 - 116
[4] BORON, FLUORINE, AND CARRIER PROFILES FOR B AND BF2 IMPLANTS INTO CRYSTALLINE AND AMORPHOUS SI
WILSON, RG
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6879 - 6889