CALCULATIONS OF THE THRESHOLD CURRENT AND TEMPERATURE SENSITIVITY OF A (GAIN)AS STRAINED QUANTUM-WELL LASER OPERATING AT 1.55 MU-M

被引：19
作者：
OREILLY, EP
HEASMAN, KC
ADAMS, AR
WITCHLOW, GP
机构：
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1987年 / 3卷 / 02期
关键词：
D O I：
10.1016/0749-6036(87)90038-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：99 / 102
页数：4
相关论文
共 12 条
[1]   BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].
ADAMS, AR .
ELECTRONICS LETTERS, 1986, 22 (05) :249-250
[2]   THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION [J].
ADAMS, AR ;
ASADA, M ;
SUEMATSU, Y ;
ARAI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L621-L624
[3]  
ALTARELLI M, 1985, J LUMINESCENCE, V30, P471
[4]   GAIN AND INTERVALENCE BAND ABSORPTION IN QUANTUM-WELL LASERS [J].
ASADA, M ;
KAMEYAMA, A ;
SUEMATSU, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (07) :745-753
[5]   RADIATIVE EFFICIENCY IN LOW-DIMENSIONAL SEMICONDUCTOR STRUCTURES [J].
BURT, MG ;
TAYLOR, RI .
ELECTRONICS LETTERS, 1985, 21 (17) :733-734
[6]   ENHANCEMENT OF OPTICAL NONLINEARITY IN P-TYPE SEMICONDUCTOR QUANTUM WELLS DUE TO CONFINEMENT AND STRESS [J].
CHANG, YC .
APPLIED PHYSICS LETTERS, 1985, 46 (08) :710-712
[7]   CALCULATED THRESHOLD CURRENT OF GAAS QUANTUM WELL LASERS [J].
DUTTA, NK .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) :7211-7214
[8]   QUALITATIVE ANALYSIS OF THE THRESHOLD CURRENT OF QUANTUM-SIZE SEMICONDUCTOR LASERS. [J].
Eliseev, P.G. ;
Drakin, A.E. .
Soviet journal of quantum electronics, 1984, 14 (01) :119-121
[9]   DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J].
FRITZ, IJ ;
PICRAUX, ST ;
DAWSON, LR ;
DRUMMOND, TJ ;
LAIDIG, WD ;
ANDERSON, NG .
APPLIED PHYSICS LETTERS, 1985, 46 (10) :967-969
[10]   MOTION OF ELECTRONS AND HOLES IN PERTURBED PERIODIC FIELDS [J].
LUTTINGER, JM ;
KOHN, W .
PHYSICAL REVIEW, 1955, 97 (04) :869-883
12