DEFECT STRUCTURE IN III-V-COMPOUND SEMICONDUCTORS - GENERATION AND EVOLUTION OF DEFECT STRUCTURES IN INGAAS AND INGAASP EPITAXIAL LAYER GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY

被引：23
作者：
CHU, SNG
NAKAHARA, S
KARLICEK, RF
STREGE, KE
MITCHAM, D
JOHNSTON, WD
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 10期
关键词：
D O I：
10.1063/1.336812
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：3441 / 3447
页数：7
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