NEUTRON TRANSMUTATION DOPING OF SILICON AND OTHER SEMICONDUCTING MATERIALS

[1] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (13) : 956 - 959

[2] Haas E. W., 1979, Neutron Transmutation Doping in Semiconductors, P27

[3] HOFFMANN HJ, 1980, PHYS REV LETT, V45, P1733, DOI 10.1103/PhysRevLett.45.1733

[4] DENSITY OF LOCALIZED LEVELS IN AMORPHOUS SILICON [J]. APPLIED PHYSICS, 1979, 18 (04): : 427 - 429

[5] HOFFMANN HJ, 1978, THESIS U KARLSRUHE

[6] HUFF HR, 1977, SEMICONDUCTOR SILICO

[7] Lark-Horovitz K., P47

[8] Meese J.M., 1979, NEUTRON TRANSMUTATIO

[9] NEUTRON TRANSMUTATION DOPING OF SILICON .1. ELECTRICAL PARAMETERS VERSUS FLUENCE [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3672 - 3676

[10] SZE SM, 1969, PHYSICS SEMICONDUCTO

[1] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (13) : 956 - 959

[2] Haas E. W., 1979, Neutron Transmutation Doping in Semiconductors, P27

[3] HOFFMANN HJ, 1980, PHYS REV LETT, V45, P1733, DOI 10.1103/PhysRevLett.45.1733

[4] DENSITY OF LOCALIZED LEVELS IN AMORPHOUS SILICON [J]. APPLIED PHYSICS, 1979, 18 (04): : 427 - 429

[5] HOFFMANN HJ, 1978, THESIS U KARLSRUHE

[6] HUFF HR, 1977, SEMICONDUCTOR SILICO

[7] Lark-Horovitz K., P47

[8] Meese J.M., 1979, NEUTRON TRANSMUTATIO

[9] NEUTRON TRANSMUTATION DOPING OF SILICON .1. ELECTRICAL PARAMETERS VERSUS FLUENCE [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3672 - 3676

[10] SZE SM, 1969, PHYSICS SEMICONDUCTO