OPTICAL ANALYSIS OF WET CHEMICALLY ETCHED INGAAS/INP WIRES

被引：1

作者：

JACOBS, B

EMMERLING, M

FORCHEL, A

GYURO, I

SPEIER, P

ZIELINSKI, E

机构：

[1] Technische Physik, Universität Würzburg, D 8700 Würzburg, Am Hubland

[2] SEL-Alcatel Research Center

[3] IBM Research Lab., CH Rüschlikon

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 17卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90102-W

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the influence of the sidewall recombination on the photoluminescence intensity of wet etched InGaAs/InP wires. We observe a strong influence of the sidewall recombination for low excitation powers (almost-equal-to 10W/cm2) independent of the particular etchant used. By using an Na2S- passivation layer the nonradiative sidewall recombination can be suppressed completely.

引用

页码：501 / 504

页数：4