DETERMINATION OF THE CURRENT VOLTAGE CHARACTERISTIC OF INGAAS USING PICOSECOND ELECTROOPTIC SAMPLING APPARATUS

被引：0

作者：

BALINAS, V

GORELENOK, AT

KROTKUS, A

STALNENIS, A

SHMIDT, NM

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 05期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：534 / 537

页数：4

共 12 条

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AHMED, SR
NAG, BR
ROY, MD
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[2] BAGRAEV NT, 1984, FIZ TEKH POLUPROV, V18, P83
[3] BALINAS V, 1989, FTP, V23, P1859
[4] DARGIS A, 1987, DETERMINATION DRIFT
[5] DOBROVOLSKIS Z, 1989, APPL PHYS A, V48, P235
[6] GALVANAUSKAS A, 1988, FIZ TEKH POLUPROVODN, V22, P1672
[7] ELECTRON VELOCITY IN GAAS - BULK AND SELECTIVELY DOPED HETEROSTRUCTURES
MASSELINK, WT
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (07) : 503 - 512
[8] REGGIANI L, 1979, P NATO ADV STUDY I U, P243
[9] SUBPICOSECOND ELECTROOPTIC SAMPLING - PRINCIPLES AND APPLICATIONS
VALDMANIS, JA
MOUROU, G
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (01) : 69 - 78
[10] VALDMANIS JA, 1983, THESIS U ROCHESTER