PULSED ELECTRON-BEAMS FOR ANNEALING OF ION-IMPLANTED SILICON

被引：4
|
作者：
LITTLE, RG
GREENWALD, AC
MINNUCCI, JA
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1979年 / 26卷 / 01期
关键词：
D O I：
10.1109/TNS.1979.4330462
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1683 / 1685
页数：3
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