PULSED ELECTRON-BEAMS FOR ANNEALING OF ION-IMPLANTED SILICON

被引：4

|

作者：

LITTLE, RG

GREENWALD, AC

MINNUCCI, JA

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1979年 / 26卷 / 01期

关键词：

D O I：

10.1109/TNS.1979.4330462

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1683 / 1685

页数：3

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