INCORPORATION OF SN INTO EPITAXIAL GAAS GROWN FROM LIQUID-PHASE

被引:20
|
作者
KUPHAL, E
SCHLACHETZKI, A
POCKER, A
机构
来源
APPLIED PHYSICS | 1978年 / 17卷 / 01期
关键词
D O I
10.1007/BF00885032
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:63 / 72
页数:10
相关论文
共 50 条
  • [31] LIQUID-PHASE EPITAXIAL-GROWTH OF THIN GAAS LAYERS FROM SUPERCOOLED SOLUTIONS
    TOYODA, N
    MIHARA, M
    HARA, T
    JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 443 - 448
  • [32] PROPERTIES OF GAAS-V GROWN BY LIQUID-PHASE EPITAXY
    BALASUBRAMANIAN, S
    KUMAR, V
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (08) : 1117 - 1118
  • [33] INFLUENCE OF OXYGEN ON PROPERTIES OF GAAS GROWN BY LIQUID-PHASE EPITAXY
    OTSUBO, M
    SEGAWA, K
    MIKI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (06) : 797 - 803
  • [34] GaAs pyramidal microtips grown by selective liquid-phase epitaxy
    Hu, LZ
    Zhang, HZ
    Wang, ZJ
    Sun, J
    Zhao, Y
    Liang, XP
    JOURNAL OF CRYSTAL GROWTH, 2004, 271 (1-2) : 46 - 49
  • [35] ELECTRICAL-PROPERTIES OF LIQUID-PHASE EPITAXIAL GAP GROWN FROM TIN SOLUTION
    NEUMANN, H
    ERNST, HG
    BUTTER, E
    KRAMER, P
    KOHL, W
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 43 (01): : K95 - K98
  • [36] ELECTRICAL-PROPERTIES OF LIQUID-PHASE EPITAXIAL INP GROWN FROM TIN SOLUTION
    NEUMANN, H
    JACOBS, B
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (02): : K139 - K144
  • [37] SHALLOW ACCEPTOR LUMINESCENCE IN GAAS GROWN BY LIQUID-PHASE EPITAXY
    BRANTLEY, WA
    QUEISSER, HJ
    HWANG, CJ
    DAWSON, LR
    SOLID STATE COMMUNICATIONS, 1972, 10 (12) : 1141 - &
  • [38] High-mobility InSb epitaxial films grown on a GaAs (001) substrate using liquid-phase epitaxy
    Dixit, VK
    Bansal, B
    Venkataraman, V
    Bhat, HL
    Subbanna, GN
    Chandrasekharan, KS
    Arora, BM
    APPLIED PHYSICS LETTERS, 2002, 80 (12) : 2102 - 2104
  • [39] COMPOSITION-MODULATED STRUCTURES IN INGAASP AND INGAP LIQUID-PHASE EPITAXIAL LAYERS GROWN ON (001) GAAS SUBSTRATES
    UEDA, O
    ISOZUMI, S
    KOMIYA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (04): : L241 - L243
  • [40] DECREASE OF DISLOCATIONS IN GAAS BY ISOELECTRONIC DOPING OF LIQUID-PHASE EPITAXIAL LAYERS
    LIU, WJ
    CHEN, NF
    JOURNAL OF CRYSTAL GROWTH, 1995, 154 (1-2) : 19 - 22