NITROGEN DOPED P-TYPE ZNSE LAYER GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：76

作者：

OHKI, A ^{[1
]}

SHIBATA, N ^{[1
]}

ZEMBUTSU, S ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL CORP,OPTOELECTR LABS,TOKAI,IBARAKI 31911,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 05期

关键词：

D O I：

10.1143/JJAP.27.L909

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L909 / L912

页数：4

共 9 条

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