共 50 条
- [21] FREE AND BOUND EXCITONS AND THE EFFECT OF ALLOY DISORDER IN MBE GROWN ALXGA1-XAS JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (23): : 4549 - 4559
- [24] ELECTRICAL-PROPERTIES OF SI-DOPED ALXGA1-XAS LAYERS GROWN BY MBE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11): : L675 - L676
- [26] Determination of the Al-content in LPE-grown AlxGa1-xAs solar cell structures TERNARY AND MULTINARY COMPOUNDS, 1998, 152 : 939 - 942
- [27] Optical properties of AlxGa1-xAs nanowires with different composition in Al STATE-OF-THE ART TRENDS OF SCIENTIFIC RESEARCH OF ARTIFICIAL AND NATURAL NANOOBJECTS (STRANN-2018), 2019, 2064