GAAS-SI HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：5
|
作者：
CHEN, J [1 ]
WON, T [1 ]
UNLU, MS [1 ]
MORKOC, H [1 ]
VERRET, D [1 ]
机构：
[1] TEXAS INSTRUMENTS,HOUSTON,TX 77001
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 10期
关键词：
D O I：
10.1063/1.99295
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：822 / 824
页数：3
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