GAAS-SI HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：5

作者：

CHEN, J ^{[1
]}

WON, T ^{[1
]}

UNLU, MS ^{[1
]}

MORKOC, H ^{[1
]}

VERRET, D ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS,HOUSTON,TX 77001

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 10期

关键词：

D O I：

10.1063/1.99295

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：822 / 824

页数：3

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共 17 条

[1] ASBECK PM, 1984, 1984 INT EL DEV M, P864
[2] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING
CHAND, N
PEOPLE, R
BAIOCCHI, FA
WECHT, KW
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817
[3] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED USING A SELF-ALIGNED DUAL-LIFT-OFF PROCESS
CHANG, MCF
ASBECK, PM
WANG, KC
SULLIVAN, GJ
SHENG, NH
HIGGINS, JA
MILLER, DL
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 303 - 305
[4] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES
CHOI, C
OTSUKA, N
MUNNS, G
HOUDRE, R
MORKOC, H
ZHANG, SL
LEVI, D
KLEIN, MV
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 992 - 994
[5] MICROWAVE TRANSISTORS - THEORY AND DESIGN
COOKE, HF
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08): : 1163 - +
[6] REDUCTION OF EXTRINSIC BASE RESISTANCE IN GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND CORRELATION WITH HIGH-FREQUENCY PERFORMANCE
FISCHER, R
MORKOC, H
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (06) : 359 - 362
[7] FISCHER R, 1985, 1985 INT EL DEV M, P332
[8] HOUDRE R, IN PRESS CRC CRITICA
[9] ISHIDA I, 1979, 1979 INT EL DEV M, P336
[10] HIGH-FREQUENCY CHARACTERISTICS OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ITO, H
ISHIBASHI, T
SUGETA, T
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 214 - 216