GAAS-SI HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：5

作者：

CHEN, J ^{[1
]}

WON, T ^{[1
]}

UNLU, MS ^{[1
]}

MORKOC, H ^{[1
]}

VERRET, D ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS,HOUSTON,TX 77001

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 10期

关键词：

D O I：

10.1063/1.99295

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：822 / 824

页数：3

共 17 条

[1]

ASBECK PM, 1984, 1984 INT EL DEV M, P864

[2] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J].

CHAND, N ;

PEOPLE, R ;

BAIOCCHI, FA ;

WECHT, KW ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :815-817

[3] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED USING A SELF-ALIGNED DUAL-LIFT-OFF PROCESS [J].

CHANG, MCF ;

ASBECK, PM ;

WANG, KC ;

SULLIVAN, GJ ;

SHENG, NH ;

HIGGINS, JA ;

MILLER, DL .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) :303-305

[4] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J].

CHOI, C ;

OTSUKA, N ;

MUNNS, G ;

HOUDRE, R ;

MORKOC, H ;

ZHANG, SL ;

LEVI, D ;

KLEIN, MV .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :992-994

[5] MICROWAVE TRANSISTORS - THEORY AND DESIGN [J].

COOKE, HF .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1163-+

[6] REDUCTION OF EXTRINSIC BASE RESISTANCE IN GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND CORRELATION WITH HIGH-FREQUENCY PERFORMANCE [J].

FISCHER, R ;

MORKOC, H .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (06) :359-362

[7]

FISCHER R, 1985, 1985 INT EL DEV M, P332

[8]

HOUDRE R, IN PRESS CRC CRITICA

[9]

ISHIDA I, 1979, 1979 INT EL DEV M, P336

[10] HIGH-FREQUENCY CHARACTERISTICS OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

ITO, H ;

ISHIBASHI, T ;

SUGETA, T .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) :214-216

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