2ND-ORDER RAMAN-SPECTROSCOPY OF THE WURTZITE FORM OF GAN

被引：39

作者：

MURUGKAR, S

MERLIN, R

BOTCHKAREV, A

SALVADOR, A

MORKOC, H

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 11期

关键词：

D O I：

10.1063/1.359190

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on Raman scattering by phonon pairs in GaN films grown on sapphire substrates by plasma-enhanced molecular beam epitaxy. The first order data are consistent with results obtained from GaN bulk crystals of the wurtzite structure. The A1 and the much weaker E2 symmetry components of the second order scattering have been identified. Two-phonon spectra are dominated by contributions due to longitudinal optical phonons. © 1995 American Institute of Physics.

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页码：6042 / 6043

页数：2

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