ACTIVATION-ENERGY FOR MIGRATION ON SILICON (111) FACE

被引：28

作者：

BEDAIR, SM ^{[1
]}

机构：

[1] ALEXANDRIA UNIV,FAC ENGN,DEPT NUCL ENGN,ALEXANDRIA,UNITED ARAB REP

来源：

SURFACE SCIENCE | 1974年 / 42卷 / 02期

关键词：

D O I：

10.1016/0039-6028(74)90042-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：595 / 599

页数：5

共 12 条

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[8] CHEMISORPTION AND ORDERED SURFACE STRUCTURES [J].

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[9] COMPUTER CALCULATIONS OF SEMICONDUCTOR SURFACE STRUCTURES [J].

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[10] INFLUENCE OF IMPURITIES ON SURFACE STRUCTURES AND FAULT GENERATION IN HOMOEPITAXIAL SI(111) FILMS [J].

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