EFFECT OF THE GAMMA-CHI CROSSOVER ON THE BINDING-ENERGIES OF CONFINED DONORS IN SINGLE GAAS/ALXGA1-XAS QUANTUM-WELL MICROSTRUCTURES

The present work investigates the effect of the Gamma-X crossover pressure at low temperatures on the donor binding energies in single-quantum-well (Qw) microstructures. It is found that, at a constant Qw thickness, the predicted donor binding energies are enhanced with increasing pressure and then decreased when approaching the crossover pressure between the Qw Gamma states and the barrier X states. It is noticed that the pressure-dependent donor binding energies are mainly related to the changes in the dielectric constants and the effective masses of both materials.