THERMAL-STRESSES AND DISLOCATION FORMATION IN LIQUID-ENCAPSULATED CZOCHRALSKI-GROWN INP CRYSTALS

被引：2

作者：

FOGLIANI, S

MASI, M

CARRA, S

MOLINAS, B

GUADALUPI, G

MEREGALLI, L

机构：

[1] POLITECN MILAN,DIPARTIMENTO CHIM FIS APPLICATA,I-20133 MILAN,ITALY

[2] TEMAV SPA,CTR RIC VENEZIA,I-30175 PORTO MARGHERA,ITALY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期

关键词：

INDIUM PHOSPHIDE; DISLOCATION FORMATION; MODELING; LEC;

D O I：

10.1016/0921-5107(94)90019-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An analysis of InP liquid-encapsulated Czochralski growth, based on a comparison of experimental and calculated dislocation density data, is presented. The adopted model is based on the calculation of the thermoelastic stress field, being the temperature field calculated through the thermal capillary model. Both Smith's rule and the Alexander-Haasen approach have been adopted to correlate the stress field with the dislocation density. Undoped and S-doped materials have been considered.

引用

收藏

页码：76 / 79

页数：4

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