RIPPLE PRODUCTION INDUCED BY OBLIQUE-INCIDENCE ION-BOMBARDMENT OF SI

被引：18
作者：
CARTER, G
NOBES, MJ
CAVE, C
ALQADI, N
机构：
[1] Department of Electronic and Electrical Engineering, University of Salford, Salford
来源：
VACUUM | 1994年 / 45卷 / 01期
关键词：
D O I：
10.1016/0042-207X(94)90345-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The initiation and evolution of individual surface topographic features which extend, with increasing ion fluence, to produce terraced facet structures with ripple-like appearance ha ve been investigated during 40 keV Ar+, O+ and Cl+ ion bombardment of Si under oblique incidence conditions. The results suggest that topography is initiated by local surface buckling which derives from preferential forward momentum imparted to recoil atoms in the near-surface region.
引用
收藏
页码：71 / 77
页数：7
相关论文
共 22 条
[1]   THEORY OF RIPPLE TOPOGRAPHY INDUCED BY ION-BOMBARDMENT [J].
BRADLEY, RM ;
HARPER, JME .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04) :2390-2395
[2]   ION-BOMBARDMENT INDUCED RIPPLE TOPOGRAPHY ON AMORPHOUS SOLIDS [J].
CARTER, G ;
NOBES, MJ ;
PATON, F ;
WILLIAMS, JS ;
WHITTON, JL .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02) :65-73
[3]   THE EFFECT OF ION SPECIES ON MORPHOLOGICAL STRUCTURE DEVELOPMENT OF ION BOMBARDED (11-3-1) SINGLE-CRYSTAL CU [J].
CARTER, G ;
NOBES, MJ ;
LEWIS, GW ;
WHITTON, JL ;
KIRIAKIDIS, G .
VACUUM, 1984, 34 (1-2) :167-173
[4]  
CARTER G, 1988, ION IMPLANTATION 198, V57, P49
[5]  
CARTER G, 1981, 7TH P INT C AT COLL, V2, P69
[6]   ION-INDUCED TOPOGRAPHY, DEPTH RESOLUTION, AND ION YIELD DURING SECONDARY ION MASS-SPECTROMETRY DEPTH PROFILING OF A GAAS/ALGAAS SUPERLATTICE - EFFECTS OF SAMPLE ROTATION [J].
CIRLIN, EH ;
VAJO, JJ ;
DOTY, RE ;
HASENBERG, TC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :1395-1401
[7]   SURFACE-MORPHOLOGY OF SI(100), GAAS(100) AND INP(100) FOLLOWING O-2+ AND CS+ ION-BOMBARDMENT [J].
DUNCAN, S ;
SMITH, R ;
SYKES, DE ;
WALLS, JM .
VACUUM, 1984, 34 (1-2) :145-151
[8]  
HAJDU C, 1987, NUCL INSTRUM METH B, V19, P20
[9]  
KAREN A, 1990, SECONDARY ION MASS S, P139
[10]  
Lewis G. W., 1986, Radiation Effects Letters Section, V87, P241, DOI 10.1080/01422448608209727
123