PHOTOLUMINESCENCE OF HYDROGENATED GAAS/ALGAAS QUANTUM-WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：3
|
作者：
BOTHA, JR
LEITCH, AWR
机构：
[1] Department of Physics, University of Port Elizabeth, Port Elizabeth 6000
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 18期
关键词：
D O I：
10.1063/1.110450
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The incorporation of hydrogen into an undoped GaAs/Al0.3Ga0.7As quantum well (QW) structure (containing wells of varying thickness) grown by metalorganic vapor phase epitaxy has been studied by photoluminescence (PL) in the temperature range 12-200 K. Hydrogenation is shown to reduce the PL linewidths. This is attributed to a passivation of impurities in the wells and heterointerfaces. In addition, the influence of hydrogenation on the radiative efficiency of each QW as a function of temperature is discussed in terms of a passivation of grown-in defects as well as a depth distribution of plasma-induced defects.
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收藏
页码：2534 / 2536
页数：3
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