THE TRANSPORT AND KINETICS OF MINORITY-CARRIERS IN ILLUMINATED SEMICONDUCTOR ELECTRODES

被引:86
作者
ALBERY, WJ [1 ]
BARTLETT, PN [1 ]
HAMNETT, A [1 ]
DAREEDWARDS, MP [1 ]
机构
[1] INORGAN CHEM LAB,OXFORD OX1 3QR,ENGLAND
关键词
D O I
10.1149/1.2127670
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1492 / 1501
页数:10
相关论文
共 12 条
[1]   PHOTOGALVANIC CELLS .4. MAXIMUM POWER FROM A THIN-LAYER CELL WITH DIFFERENTIAL ELECTRODE-KINETICS [J].
ALBERY, WJ ;
ARCHER, MD .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1978, 86 (01) :19-34
[2]   PHOTOELECTROLYSIS AND PHYSICAL-PROPERTIES OF SEMICONDUCTING ELECTRODE WO3 [J].
BUTLER, MA .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :1914-1920
[3]   DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].
GARTNER, WW .
PHYSICAL REVIEW, 1959, 116 (01) :84-87
[4]   ELECTROCHEMICAL BEHAVIOR OF AN AQUEOUS ELECTROLYTE-I-DOPED ZNSE JUNCTION IN THE DARK AND UNDER ILLUMINATION [J].
GAUTRON, J ;
LEMASSON, P ;
RABAGO, F ;
TRIBOULET, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (11) :1868-1875
[5]  
KOUTETSKII Y, 1958, ZH FIZ KHIM, V32, P1565
[6]   SEMICONDUCTOR ELECTRODES .7. DIGITAL-SIMULATION OF CHARGE INJECTION AND ESTABLISHMENT OF SPACE-CHARGE REGION IN ABSENCE AND PRESENCE OF SURFACE-STATES [J].
LASER, D ;
BARD, AJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) :1828-1832
[8]   PHOTOCHARACTERISTICS FOR ELECTROLYTE-SEMICONDUCTOR JUNCTIONS [J].
REISS, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) :937-949
[9]   CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].
SAH, CT ;
NOYCE, RN ;
SHOCKLEY, W .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243
[10]  
Stegun I A, 1970, HDB MATH FUNCTIONS, P504