ANODIC FORMATION OF OXIDE FILMS ON SILICON

被引:176
作者
SCHMIDT, PF
MICHEL, W
机构
关键词
D O I
10.1149/1.2428542
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:230 / 236
页数:7
相关论文
共 28 条
[1]   ANODIC POLARIZATION OF ZIRCONIUM AT LOW POTENTIALS - FORMATION RATES, FORMATION FIELD, ELECTROLYTIC PARAMETERS, AND FILM THICKNESSES OF VERY THIN OXIDE FILMS [J].
ADAMS, GB ;
VANRYSSELBERGHE, P .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1955, 102 (09) :502-511
[2]   RECTIFICATION PROPERTIES OF METAL SEMICONDUCTOR CONTACTS [J].
BORNEMAN, EH ;
SCHWARZ, RF ;
STICKLER, JJ .
JOURNAL OF APPLIED PHYSICS, 1955, 26 (08) :1021-1028
[3]  
BORNEMANN E, UNPUBLISHED
[4]   THE SURFACE-BARRIER TRANSISTOR .1. PRINCIPLES OF THE SURFACE-BARRIER TRANSISTOR [J].
BRADLEY, WE .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (12) :1702-1706
[5]   THEORY OF THE OXIDATION OF METALS [J].
CABRERA, N ;
MOTT, NF .
REPORTS ON PROGRESS IN PHYSICS, 1948, 12 :163-184
[6]   IONIC CURRENT AND FILM GROWTH OF THIN OXIDE LAYERS ON ALUMINIUM [J].
CHARLESBY, A .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (400) :317-329
[7]   ELECTRON AND PHOTOCURRENTS IN THIN FILMS OF ZIRCONIUM OXIDE [J].
CHARLESBY, A .
ACTA METALLURGICA, 1953, 1 (03) :348-354
[8]   IONIC CURRENTS IN THIN FILMS OF ZIRCONIUM OXIDE [J].
CHARLESBY, A .
ACTA METALLURGICA, 1953, 1 (03) :340-347
[9]  
CHARLESBY A, 1954, ACTA METALLURGICA, V2, P698
[10]  
CHARLESBY A, 1954, ACTA METALLURGICA, V2, P314