共 64 条
[1]
REAPPRAISAL OF SI-INTERLAYER-INDUCED CHANGE OF BAND DISCONTINUITY AS GAAS-ALAS HETEROINTERFACE TAKING ACCOUNT OF DELTA-DOPING
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1992, 31 (8A)
:L1012-L1014
[2]
SURFACE-STRUCTURE AND INTERFACE FORMATION OF SI ON GAAS(100)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1987, 5 (04)
:1135-1140
[3]
ELECTRICAL MEASUREMENTS OF THE CONDUCTION-BAND DISCONTINUITY OF THE ABRUPT GE-GAAS (100) HETEROJUNCTION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1983, 1 (03)
:675-681
[4]
BARONI S, 1989, NATO ADV SCI I B-PHY, V206, P251
[5]
SURFACE PROCESSES CONTROLLING MBE HETEROJUNCTION FORMATION - GAAS(100)/GE INTERFACES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1982, 21 (02)
:491-497
[6]
BENCH M, UNPUB
[9]
ALAS-GAAS HETEROJUNCTION ENGINEERING BY MEANS OF GROUP-IV ELEMENTAL INTERFACE LAYERS
[J].
PHYSICAL REVIEW B,
1992, 45 (08)
:4528-4531
[10]
EPITAXIAL-GROWTH AND INTERFACE PARAMETERS OF SI LAYERS ON GAAS(001) AND ALAS(001) SUBSTRATES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1991, 9 (04)
:2225-2232