ON-WAFER HALL-EFFECT MEASUREMENT SYSTEM

被引：2

作者：

MUMFORD, PD ^{[1
]}

LOOK, DC ^{[1
]}

机构：

[1] WRIGHT STATE UNIV,UNIV RES CTR,DAYTON,OH 45435

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1991年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.1142405

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A novel system capable of making on-wafer Hall-effect measurements of a patterned wafer during the fabrication sequence has been developed. A flat, powerful rare-earth magnet provides the magnetic field required. The wafer need only have van der Pauw patterns available for on-wafer measurement capability. Measurement of room temperature Hall mobility can quickly and easily be obtained, making possible detailed study of carrier concentration and mobility variations during wafer fabrication.

引用

页码：1666 / 1667

页数：2