CONDUCTION CURRENT WAVEFORMS OF AVALANCHE DIODES

[1] ELECTRONIC TUNING EFFECTS IN READ MICROWAVE AVALANCHE DIODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 169 - &

[2] HIGH-EFFICIENCY OSCILLATIONS IN GERMANIUM AVALANCHE DIODES BELOW TRANSIT-TIME FREQUENCY [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09): : 1611 - +

[3] COMPUTER SIMULATION OF SILICON READ AND P-N-N+ IMPATT DIODES UNDER LARGE SIGNAL CONDITIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (01) : 82 - +

[4] MATSUMURA M, 1969, IECE JAPAN T, VC52, P482

[5] NEGATIVE RESISTANCE IN P-N JUNCTIONS UNDER AVALANCHE BREAKDOWN CONDITIONS .I. [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 137 - +

[6] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02): : 401 - 446

[1] ELECTRONIC TUNING EFFECTS IN READ MICROWAVE AVALANCHE DIODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 169 - &

[2] HIGH-EFFICIENCY OSCILLATIONS IN GERMANIUM AVALANCHE DIODES BELOW TRANSIT-TIME FREQUENCY [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09): : 1611 - +

[3] COMPUTER SIMULATION OF SILICON READ AND P-N-N+ IMPATT DIODES UNDER LARGE SIGNAL CONDITIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (01) : 82 - +

[4] MATSUMURA M, 1969, IECE JAPAN T, VC52, P482

[5] NEGATIVE RESISTANCE IN P-N JUNCTIONS UNDER AVALANCHE BREAKDOWN CONDITIONS .I. [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 137 - +

[6] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02): : 401 - 446