GROWTH OF SEMI-INSULATING EPITAXIAL GALLIUM-ARSENIDE BY CHROMIUM DOPING IN METAL-ALKYL+HYDRIDE SYSTEM

被引：46
作者：
BASS, SJ
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1978年 / 44卷 / 01期
关键词：
D O I：
10.1016/0022-0248(78)90324-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：29 / 33
页数：5
相关论文
共 13 条
[1]  
AMBRIDGE T, 1974, GALLIUM ARSENIDE REL, P320
[2]   DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J].
BASS, SJ .
JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :172-178
[3]  
BASS SJ, GALLIUM ARSENIDE REL, P1
[4]   MODIFIED ENTRAINMENT METHOD FOR MEASURING VAPOR-PRESSURES AND HETEROGENEOUS EQUILIBRIUM-CONSTANTS .1. THEORY, AND VALIDATION OF METHOD USING WATER AND LEAD [J].
BATTAT, D ;
FAKTOR, MM ;
GARRETT, I ;
MOSS, RH .
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I, 1974, 70 :2267-2279
[5]  
COX HM, 1976, GALLIUM ARSENIDE REL, P11
[6]  
CROSSLEY I, 1976, GALLIUM ARSENIDE REL, P289
[7]   MODEL RELATING ELECTRICAL-PROPERTIES AND IMPURITY CONCENTRATIONS IN SEMI-INSULATING GAAS [J].
LINDQUIST, PF .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :1262-1267
[8]   USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J].
MANASEVIT, HM ;
SIMPSON, WI .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) :1725-+
[9]   EPITAXIAL GALLIUM ARSENIDE FROM TRIMETHYL GALLIUM AND ARSINE [J].
RAICHOUDBURY, P .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) :1745-+
[10]  
SAVA MA, 1976, J ELECTROCHEM SOC, V123, P1498
12