SUPERLATTICE APPROACH TO THE INTERFACE STATES IN III-V-SEMICONDUCTORS

[1] [Anonymous], ELECTRONIC STRUCTURE

[2] INVERSION LAYER TRANSPORT AND PROPERTIES OF OXIDES ON INAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1032 - 1036

[3] BAYRAKTAROGLU B, 1976, ELECTRON LETT, V13, P53

[4] SHUBNIKOV-DEHAAS OSCILLATIONS IN A SEMICONDUCTOR SUPERLATTICE [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (25) : 1489 - 1493

[5] ELECTRON SUBBANDS ON INP [J]. PHYSICAL REVIEW B, 1982, 26 (04): : 1989 - 1998

[6] UNIFIED DISORDER INDUCED GAP STATE MODEL FOR INSULATOR-SEMICONDUCTOR AND METAL-SEMICONDUCTOR INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1130 - 1138

[7] HASEGAWA H, 1981, OYOBUTSURI, V41, P1289

[8] INTRINSIC SURFACE STATES IN SEMICONDUCTORS .1. DIAMOND-TYPE CRYSTALS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (06) : 1475 - +

[9] GAAS INVERSION-TYPE MIS TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 751 - 759

[10] KAWAKAMI T, 1979, ELECTRON LETT, V15, P743, DOI 10.1049/el:19790542

[1] [Anonymous], ELECTRONIC STRUCTURE

[2] INVERSION LAYER TRANSPORT AND PROPERTIES OF OXIDES ON INAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1032 - 1036

[3] BAYRAKTAROGLU B, 1976, ELECTRON LETT, V13, P53

[4] SHUBNIKOV-DEHAAS OSCILLATIONS IN A SEMICONDUCTOR SUPERLATTICE [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (25) : 1489 - 1493

[5] ELECTRON SUBBANDS ON INP [J]. PHYSICAL REVIEW B, 1982, 26 (04): : 1989 - 1998

[6] UNIFIED DISORDER INDUCED GAP STATE MODEL FOR INSULATOR-SEMICONDUCTOR AND METAL-SEMICONDUCTOR INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1130 - 1138

[7] HASEGAWA H, 1981, OYOBUTSURI, V41, P1289

[8] INTRINSIC SURFACE STATES IN SEMICONDUCTORS .1. DIAMOND-TYPE CRYSTALS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (06) : 1475 - +

[9] GAAS INVERSION-TYPE MIS TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 751 - 759

[10] KAWAKAMI T, 1979, ELECTRON LETT, V15, P743, DOI 10.1049/el:19790542