HIGH-TEMPERATURE STABLE W/GAAS INTERFACE AND APPLICATION TO METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AND DIGITAL CIRCUITS

被引：28

作者：

JOSEFOWICZ, JY

RENSCH, DB

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 06期

关键词：

D O I：

10.1116/1.583652

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1707 / 1715

页数：9

共 21 条

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