HOLE LIFETIME IN EPITAXIAL N-GE LAYERS GROWN ON P-GAAS SUBSTRATES

被引：0

作者：

SCHULZE, RG

KRUSE, PW

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来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1968年 / 13卷 / 03期

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中图分类号：

O4 [物理学];

学科分类号：

0702 ;

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页码：498 / &

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[1] SOLID-STATE INFRARED-WAVELENGTH CONVERTER EMPLOYING HIGH-QUANTUM-EFFICIENCY GE-GAAS HETEROJUNCTION [J].

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PRIBBLE, FC ;

SCHULZE, RG .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) :1718-&

[2] PHOTOEFFECTS IN NONUNIFORMLY IRRADIATED P-N JUNCTIONS [J].

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[3] MEASUREMENT OF MINORITY CARRIER LIFETIME IN GERMANIUM [J].

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PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1420-1423